zxtp19100cz da tasheet number: ds 337 3 9 rev. 2 - 2 1 of 8 www.diodes.com o ctober 2014 ? diodes incorporated zxtp19100cz a product line of diodes incorporated 10 0v pnp medium power transistor in sot89 features ? b v ceo > - 100 v ? b v e c o > - 7 v ? i c = - 2 a h igh continuous collector current ? i c m = - 3 a peak collector current ? v ce(s at ) < 130mv @ - 1a ? r ce(s at ) = 100m f or a low equivalent on - resistance ? comp lementary npn t ype: zxtn19100cz ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note ? qualified to aec - q101 standards for high reliability ? ppap c apable (note 4) mechanical data ? case: sot89 ? case m aterial: m olded p lastic. green m olding c ompound ul flammability rating 94v - 0 ? moisture sen sitivity: level 1 per j - std - 020 ? terminals: finish - matte tin plated leads, solderable per mil - std - 202, method 208 ? weight: 0.05 grams (approximate) ordering information (note s 4 & 5 ) product compliance marking reel s ize (inches) tape w idth (mm) quantity per r eel zxtp19100czta aec - q101 1m3 7 12 1,000 zxtp19100czqta automotive 1m3 7 12 1,000 notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products are defined as those which contain < 900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec - q101 qualified and are ppap capable. automotive, aec - q101 and standard products are electrically and thermally the same, except where specified. for more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/ . 5. for packaging deta ils, go to our website at http://www.diodes.com/products/packages.html. marking information 1m3 = product type marking code top view device s ymbol top view pin out sot89 1m3 c e c b c e b
zxtp19100cz da tasheet number: ds 337 3 9 rev. 2 - 2 2 of 8 www.diodes.com o ctober 2014 ? diodes incorporated zxtp19100cz a product line of diodes incorporated absolute maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol limit unit collector - base voltage v cbo - 110 v collector - emitter voltage (forward b locking) v ce x - 110 v collector - emitter voltage v ceo - 100 v emitter - collector voltage (reverse b locking) v eco - 7 v emitter - base voltage v ebo - 7 v continuous collector current i c - 2 a peak pulse current i cm - 3 a base current i b - 1 a thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation linear derating factor (note 6) p d 1.1 8.8 w mw/ c (note 7) 1.8 14.4 (note 8) 2.4 19.2 (note 9) 4.46 35.7 thermal resistance, junction to ambient air (note 6) r ja 1 17 c /w ? j l 4. 7 operating and storage temperature range t j, t stg - 5 5 to + 150 c esd ratings (note 1 1 ) characteristic symbol value unit jedec class electrostatic discharge - human body model esd hbm 4, 000 v 3 a electrostatic discharge - machine model esd mm 400 v c notes: 6 . for a device mounted with the exposed collector pad on 1 5mm x 1 5mm 1oz copper that is on a single - sided 0 .6mm fr4 pcb ; device is measured under still air conditions whilst operating in a steady - state. 7 . same as note 6 , except the device is mounted on 25 mm x 25 mm 1 oz copper . 8 . same as note 6 , except the device is mounted on 50mm x 50mm 2 oz copper. 9 . same as note 8, except the device is measured at t<5 seconds. 1 0. thermal resistance from junction to solder - point (on the exposed collector pad). 1 1 . refer to jedec specification jesd22 - a114 and jesd22 - a115.
zxtp19100cz da tasheet number: ds 337 3 9 rev. 2 - 2 3 of 8 www.diodes.com o ctober 2014 ? diodes incorporated zxtp19100cz a product line of diodes incorporated thermal characteristics and derating information 90 100 110 120 1 10 100 1m 100m 1 10 100 10m 100m 1 safe operating area 50mm x 50mm 2oz cu single pulse t a =25c v ce(sat) limited 100s 1ms 10ms 100ms 1s dc safe operating area -i c collector current (a) -v ce collector-emitter voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 50mm x 50mm 2oz cu 25mm x 25mm 1oz cu 15mm x 15mm 1oz cu derating curve temperature (c) max power dissipation (w) bv cex =110v bv ceo =100v failure may occur in this region t a =25c -v ce collector-emitter voltage (v) - i c collector current (a)
zxtp19100cz da tasheet number: ds 337 3 9 rev. 2 - 2 4 of 8 www.diodes.com o ctober 2014 ? diodes incorporated zxtp19100cz a product line of diodes incorporated thermal characteristics and derating information (cont.) 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 100 1m 10m 100m 1 10 100 1k 1 10 100 100 1m 10m 100m 1 10 100 1k 0 10 20 30 40 50 60 70 100 1m 10m 100m 1 10 100 1k 1 10 100 100 1m 10m 100m 1 10 100 1k 0 10 20 30 40 50 100 1m 10m 100m 1 10 100 1k 1 10 100 15mm x 15mm 1oz cu d=0.5 d=0.2 d=0.05 d=0.1 single pulse single pulse t a =25c 15mm x 15mm 1oz cu 25mm x 25mm 1oz cu d=0.5 d=0.2 d=0.05 d=0.1 single pulse single pulse t a =25c 25mm x 25mm 1oz cu 50mm x 50mm 2oz cu d=0.5 d=0.2 d=0.05 d=0.1 single pulse thermal resistance (c/w) thermal resistance (c/w) thermal resistance (c/w) pulse width (s) pulse width (s) transient thermal impedance single pulse t a =25c 50mm x 50mm 2oz cu maximum power (w) maximum power (w) maximum power (w) pulse power dissipation pulse width (s) pulse width (s) transient thermal impedance pulse power dissipation pulse width (s) pulse width (s) transient thermal impedance pulse power dissipation
zxtp19100cz da tasheet number: ds 337 3 9 rev. 2 - 2 5 of 8 www.diodes.com o ctober 2014 ? diodes incorporated zxtp19100cz a product line of diodes incorporated e lectrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition collector - base breakdown voltage bv cbo - 110 - 135 c = - 100 a collector - emitter breakdown voltage bv cex - 110 - 135 e = - 1 00 a , r bc <1k ? bc > - 0.25v collector - emitter breakdown voltage (note 12) bv ceo - 100 - 135 c = - 1 0 m a emitter - collector breakdown voltage (reverse b locking) bv e cx - 7 - 8.3 e = - 1 00 a , r bc <1k? or bc > - 0.25v emitter - collector breakdown voltage (r everse b locking) bv e c o - 7 - 8.7 e = - 10 0a emitter - base breakdown voltage bv ebo - 7 - 8.3 e = - 10 0a collector - base cutoff current i cbo - 0.5 na a v cb = - 110 v v cb = - 110 v , t a = + 100c emitter cutoff current i ebo eb = - 5.6 v dc current transfer static r atio (note 12) h fe 2 00 7 0 20 300 130 25 500 c = - 100ma, v ce = - 2v i c = - 1a , v ce = - 2 v i c = - 2 a, v ce = - 2v collector - emitter saturation voltage (note 12) v ce(sat) c = - 0.5m a, i b = - 20ma i c = - 1 a, i b = - 100ma i c = - 1 a, i b = - 50ma i c = - 2 a, i b = - 200ma base - emitter saturation voltage (note 12) v be(sat) c = - 2 a, i b = - 200m a base - emitter turn - on voltage (note 12) v be(on) c = - 2 a, v ce = - 2v transitional fr e quency f t e = - 100m a, v ce = - 10 v f = 5 0mhz input capacitance c i bo e b = - 0.5 v , f = 1mhz, output c apacitance c obo c b = - 1 0 v , f = 1mhz, delay time t d 24.7 ns i c = - 5 00ma, v c c = - 10v , i b1 = - i b2 = - 50ma r b = 100?, r c = 20? r 22.4 ns storage time t s 660 ns fall time t f 107 ns note: 1 2 . measured under pulsed conditions. pulse width 300s. duty cycle 2%.
zxtp19100cz da tasheet number: ds 337 3 9 rev. 2 - 2 6 of 8 www.diodes.com o ctober 2014 ? diodes incorporated zxtp19100cz a product line of diodes incorporated typical electrical characteristics (@ t a = +25c, unless otherwise specified.) 1m 10m 100m 1 10 10m 100m 1 10m 100m 1 0.0 0.1 0.2 0.3 0.4 1m 10m 100m 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1m 10m 100m 1 0.2 0.4 0.6 0.8 1.0 1m 10m 100m 1 0.2 0.4 0.6 0.8 1.0 1.2 10m 100m 1 10 100 0 50 100 150 200 250 300 350 400 0 100 200 300 400 500 600 v ce(sat) v i c t a =25c i c /i b =50 i c /i b =20 i c /i b =10 - v ce(sat) (v) - i c collector current (a) 100c v be(sat) v i c i c /i b =10 150c 25c -55c - v ce(sat) (v) - i c collector current (a) 150c h fe v i c v ce =2v -55c 25c 100c normalised gain - i c collector current (a) 150c 25c v ce(sat) v i c i c /i b =10 100c -55c - v be(sat) (v) - i c collector current (a) 150c v be(on) v i c v ce =2v 100c 25c -55c - v be(on) (v) - i c collector current (a) cibo capacitance v voltage f = 1mhz cobo capacitance (pf) - voltage(v) typical gain ( h fe )
zxtp19100cz da tasheet number: ds 337 3 9 rev. 2 - 2 7 of 8 www.diodes.com o ctober 2014 ? diodes incorporated zxtp19100cz a product line of diodes incorporated package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. note: for high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and c learance distances between device terminals and pcb tracking. sot89 dim min max typ a 1.40 ? ? b 0.50 0.62 0.56 b1 0.42 0.54 0.48 c 0.35 0.43 0.38 d 4.40 4.60 4.50 d 1 1.62 1.83 1.733 d2 1.61 1.81 1.71 e 2.40 2.60 2.50 e2 2.05 2.35 2.20 e - - 1.50 h 3.95 4.25 4.10 h1 2.63 2.93 2.78 l 0.90 1.20 1.05 l1 0.327 0.527 0.427 z 0.20 0.40 0.30 all dimensions in mm dimensions value (in mm) c 1.500 g 0.244 x 0.580 x1 0.760 x2 1.933 y 1.730 y1 3.030 y2 1.500 y3 0.770 y4 4.530 y4 x2 y1 x y y2 y3 g c x1 h1 e h d1 b e c l a d 8 (4x) d2 e2 z l1 r0.200 b1
zxtp19100cz da tasheet number: ds 337 3 9 rev. 2 - 2 8 of 8 www.diodes.com o ctober 2014 ? diodes incorporated zxtp19100cz a product line of diodes incorporated important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents und er the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any cus tomer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless aga inst all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associa ted with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united state s, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. l ife support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support devi ce or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that m ay be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2014 , diodes incorporated www.diodes.com
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